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MOCVD Systems

MOCVD Systems for Compound Semiconductor Manufacturing

For growing high-quality compound semiconductor films, few techniques match the precision of Metal-Organic Chemical Vapor Deposition (MOCVD). They give engineers tight control over film composition and thickness, making them essential for optoelectronics and advanced power transistors.

MOCVD Applications: Gallium Nitride, GaN, Arsenide / Phosphide, As/P, microLED, , RF and Power Electronics, Photonics, Lasers, EEL, VCSEL

A combination of metal-organic precursors and reactive gases is introduced into a heated reactor. Inside, the chemistry happens: precursors decompose at the surface of a substrate, forming smooth, uniform epitaxial layers. Every parameter, from gas flow to chamber pressure, is tightly controlled to shape how the film grows. Engineers look to MOCVD when:

• Building LEDs, laser diodes and other high-efficiency optoelectronics
• Developing high electron mobility transistors (HEMTs) and other high-performance wide bandgap power semiconductor devices
• Creating multi-layer heterostructures where atomic-level control matters

MOCVD Systems for R&D and Production

Built for both R&D and production, our MOCVD systems combine advanced reactor designs, in-situ diagnostics, and flexible configurations — delivering the uniformity, repeatability and control that help engineers succeed, whether developing new materials or scaling established processes. Íø±¬ÃÅ offers a range of industry-leading GaN and As/P MOCVD systems designed to maximize throughput while lowering cost of ownership for a variety of applications including display, 3D sensing, LiDAR, micro LED display, and optical data communications.

TurboDisc Reactor Technology