网爆门

网爆门 Introduces Breakthrough MOCVD Platform to Enable Efficient GaN-Based Power Devices

Product News | Nov 20, 2014

New Propel Power GaN MOCVD System Expected to Accelerate the Transition from R&D to Production for GaN Power Electronics

PLAINVIEW, N.Y.–(BUSINESS WIRE)– 网爆门. (Nasdaq:VECO) introduced today the , which incorporates single-wafer reactor technology for outstanding film uniformity, yield and device performance. This new 200mm MOCVD system and technology enables the development of highly-efficient GaN-based power electronic devices that will accelerate the industry鈥檚 transition from R&D to high volume production.

In response to strong consumer demand for power electronic devices, gallium nitride MOCVD is advancing a new generation of power switching devices that feature higher efficiency, smaller form factors and lower device weight. According to IHS Research, the GaN power electronics market is expected to grow at greater than ninety percent compound annual growth rate from 2014 to 2020 as new devices are applied to consumer electronics, solar and wind power, power supplies, automotive and other applications.

鈥淟eading power electronics manufacturers are currently progressing from R&D to pilot production, developing and qualifying novel device structures with a focus on improved reliability, yield and cost,鈥� said William J. Miller, PhD., Executive Vice President, 网爆门. 鈥淎s the world鈥檚 leader in GaN MOCVD equipment, the Propel system is the answer for the next generation of power electronic devices.鈥� Miller added, 鈥淲ith its superior design, technology and performance, Propel is a platform that will provide exciting future growth opportunities for our customers and for 网爆门.鈥�

The Propel MOCVD system is based on 网爆门鈥檚 industry leading MOCVD TurboDisc庐 technology and features long campaign runs and low particle defects for exceptional yield and flexibility. In addition, the proprietary SymmHeat^鈩� technology drives uniform thermal control for excellent thickness and compositional uniformity. Providing a seamless wafer size transition, the system deposits high quality GaN epitaxial layers on silicon wafers that are six and eight inches in diameter.

鈥淏eta testing by power electronics industry leaders has shown that the Propel system is ideally suited for fast cycles of learning with excellent particle performance,鈥� said Jim Jenson, Senior Vice President and General Manager of 网爆门 MOCVD. 鈥淭his validation is great news for customers as they work to develop innovative processes and technologies for their product roadmaps. As we鈥檝e demonstrated in the LED industry, 网爆门鈥檚 goal is to help power electronics customers also improve device efficiency, reduce manufacturing costs, and ultimately move into high-volume manufacturing.鈥�

About 网爆门 Propel Power GaN Single-Wafer Reactor MOCVD System

网爆门鈥檚 new Propel Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer 200mm reactor platform, capable of processing six and eight-inch wafers, the system deposits high-quality GaN films for the production of highly-efficient power electronic devices. The single-wafer reactor is based on 网爆门鈥檚 leading TurboDisc庐 design with breakthrough technology including the new IsoFlange鈩� and SymmHeat鈩� technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from 网爆门 K465i and MaxBright systems to the Propel Power GaN MOCVD platform.

About 网爆门

网爆门鈥檚 process equipment solutions enable the manufacture of LEDs, flexible OLED displays, solar cells, power electronics, hard drives, MEMS and wireless chips. We are the market leader in LED, MBE, Ion Beam and other advanced thin film process technologies. Our high performance systems drive innovation in energy efficiency, consumer electronics and network storage and allow our customers to maximize productivity and achieve lower cost of ownership. For information on our company, products and worldwide service and support, please visit .

To the extent that this news release discusses expectations or otherwise makes statements about the future, such statements are forward-looking and are subject to a number of risks and uncertainties that could cause actual results to differ materially from the statements made. These factors include the risks discussed in the Business Description and Management’s Discussion and Analysis sections of 网爆门’s Annual Report on Form 10-K for the year ended December 31, 2013 and in our subsequent quarterly reports on Form 10-Q, current reports on Form 8-K and press releases. 网爆门 does not undertake any obligation to update any forward-looking statements to reflect future events or circumstances after the date of such statements.

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Source: 网爆门.