Where 12 Generations of Innovation Meets 12-Inch Scale

������’s GENXII 300mm barium titanate (BTO) MBE system enables scalable production of next-generation silicon photonic devices with unmatched precision, performance, and cost efficiency.

BTO is a breakthrough electro-optic material that delivers exceptionally strong Pockels effect and low optical loss, enabling silicon photonic modulators with lower drive voltages, higher bandwidth, and significantly improved energy efficiency. These advantages make BTO a promising solution for the demanding requirements of artificial intelligence (AI), datacenter networking, quantum computing, and future optical I/O architectures.

Developed in collaboration with imec, the GENXII platform combines advanced epitaxial process control, automated wafer handling, and scalable 300mm production capability to accelerate the commercialization of high-performance optical interconnect technologies. The GENXII system was engineered for production-scale performance, offering more than four times the throughput of conventional BTO deposition approaches while delivering highly uniform films, precise composition control, and exceptional crystalline quality. Advanced automation, integrated process monitoring, and specialized 300mm system architecture help maximize yield, uptime, and cost efficiency while ensuring consistent device performance wafer after wafer.

Leveraging ������’s decades of semiconductor manufacturing expertise, the GENXII system provides a seamless path from research and development to high-volume production. By enabling scalable integration of high-quality BTO on silicon, ������ is helping customers unlock a new generation of ultra-low-power, high-speed photonic devices that will power the future of AI-driven computing and communications.

GENXII benefits:

• Engineered for rapid deposition rates and automated wafer handling to deliver exceptional throughput—4x higher than other BTO systems
• Superior wafer cost advantage enabled by low system cost of ownership
• Precise composition and interface control for unmatched device performance
• High productivity with shortened preventative maintenance times
• Real-time process monitoring to increase epitaxial yield

GENXII MBE Production System FAQs

1. Why was the GENXII system developed specifically for BTO production?
Although molecular beam epitaxy (MBE) has long been capable of producing barium titanate (BTO) films, traditional oxide MBE— restricted by low throughput, run-to-run variation, and difficult process automation – wasn’t built for the demands of high-volume manufacturing. Working with imec, ������ identified this gap in the market and engineered the GENXII system to close it, purpose-building a platform that transforms BTO into a production-ready capability. The result is a high-volume BTO solution that delivers more than four times the throughput and higher process repeatability of conventional deposition approaches, without sacrificing film quality.

2. How does the GENXII system support the transition from R&D to 300mm silicon production?
One of the biggest risks in commercializing a new material is the scale-up gap between the lab and the fab. The GENXII system is designed to speed that transition: processes developed on ������’s research MBE platforms transfer to GENXII with minimal tuning, so customers can move from material development to high-volume 300mm silicon production without re-engineering their process. Backed by ������’s decades of semiconductor manufacturing expertise, this capability creates a seamless, lower-risk path from proof-of-concept to scalable production.

3. What features ensure process repeatability and manufacturing yield?
Consistent device performance in BTO epitaxy depends on holding precise stoichiometry wafer after wafer — which is exactly what the GENXII platform is engineered to do. It combines advanced automation, individual source flux monitoring, integrated process control, and source technology built specifically for BTO to minimize process variation and deliver repeatable wafer-to-wafer results. Together with GENXII’s specialized 300mm system architecture, these capabilities help maximize yield, uptime, and cost efficiency across high-volume production.

4. What is BTO, and why is it important for silicon photonics?
BTO represents a major advancement in electro-optics, combining an ultra-high Pockels effect with low loss. When integrated into silicon photonic modulators, these properties enable lower drive voltages, higher bandwidth, and significantly improved energy efficiency. That combination makes BTO a promising solution for demanding applications such as AI, datacenter networking, quantum computing, and future optical I/O architectures.

5. What film quality does the GENXII system deliver for BTO on silicon?
The GENXII system is engineered to produce highly uniform BTO films with precise composition and interface control, which is essential for consistent device performance. This high-quality thin film capability enables low optical loss, translating directly into lower drive voltages and higher bandwidth for silicon photonic modulators. By integrating BTO via MBE, the system helps produce ultra-energy-efficient modulators suited to next generation photonic device

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������’s GEN20 MBE system is an ultra-flexible tool with a design configurable for III-V and emerging materials, including applications that require the integration of e-beam technology. The system incorporates production design technology that allows for an optional cluster tool wafer transfer system for an ideal lab-to-fab migration.

• Ideal for materials research and pre-production environments
• Vertical source to substrate orientation with 12 MBE source ports and the option to add e-beam capabilities
• Manual or automated wafer transfer options
• Configurable cryopanel, manipulator, shutters and in-situ monitoring equipment
• Modular design allows up to two growth modules

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������’s GEN200® MBE system is the most cost-effective and highest-capacity multi-4″ production MBE system in the market today. The system delivers superior throughput, long campaigns and excellent wafer quality in growing GaAs- or InP-based wafers for such devices as pump lasers, VCSELs and HBTs.

• Delivers the lowest-cost 4 x 4″ epiwafer growth
• Modular architecture allows significantly smaller footprint than comparable MBE systems
• Allows for up to two growth modules, increasing throughput or allowing processing of incompatible materials
• Optional bulkhead installation optimizes cleanroom space
• Incorporates the industry’s most innovative, reliable system hardware, sources and components

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The GEN2000® MBE system provides superior throughput, longer campaigns, smaller footprint and cluster tool wafer handling. It is the ideal choice for high-volume manufacturing of wireless telecommunications devices such as HBTs and pHEMTs, and emerging applications requiring multi-6″ production with low cost of ownership.

• Delivers industry’s lowest cost per wafer
• Superior design enables 40 percent to 60 percent smaller footprint than comparable MBE systems
• Modular architecture allows for up to two growth modules, increasing throughput or allowing processing of incompatible materials
• Easy maintenance maximizes uptime
• Optional bulkhead installation optimizes cleanroom space
• Incorporates the industry’s most innovative, reliable system hardware, sources and components

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The GEN10 MBE System is the most economical, flexible cluster tool system in a proven platform, allowing for up to three configurable, material-specific growth modules. This enables high system utilization, allowing multiple researchers to use the system at the same time and perform unattended growths and calibrations. This, combined with ������ components technology, are key factors in why the MBE community is choosing the GEN10 MBE System, no matter what the application.

• Automated wafer transfer enables high system utilization, allowing multiple researchers to use the system at the same time and perform unattended growths and calibrations
• Economical upgrade path to additional growth modules, maximum of three
• Configurable, material-specific growth modules in a cluster architecture enable growth of incompatible materials in one vacuum system
• Direct process path to larger production MBE systems

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The new, award-winning GENxcel system expands on the GENxplor, the best-selling MBE system since its introduction in August 2013, with high-quality epitaxial growth on single 4” substrates compared to the 3” capabilities of the GENxplor system. The GENxcel system features an easy-to-use manual transfer system, 12 source ports and modern electronics fully integrated into a single frame design for maximum laboratory footprint efficiency.

• High quality epitaxial layers on substrates up to 4″ in diameter
• Unique, single frame architecture improves ease-of-use, provides convenient source access and enhanced serviceablility
• Efficient, all-in-one design combines manual system with on-board electronics for 40 percent lab space savings compared to other MBE systems
• Ideal for cutting-edge research on a wide variety of materials including GaAs, nitrides and oxides
• Molly® software integrates easy recipe writing, automated growth control and always-on data recording
• Optional Nova ultra high temperature substrate heater for proven performance at 1850°
• Direct scalability to GEN20, GEN200® and GEN2000® MBE systems

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